RF power amplifiers are used to simulate interactions between a device and electromagnetic fields it can encounter in real-life circumstances. These tests are done by boosting RF signals and demonstrate whether electromagnetic interference (EMI) will occur. To effectively simulate specific electromagnetic field conditions for EMC standards, RF power amplifiers need to amplify over a specific frequency range, power output, power efficiency, gain, and linearity. Most electronic devices, including cell phones and radios, can produce EMI and cause signal interference or damage to the device.
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The device operates within a 40-67 GHz frequency range and has both a typical and minimum Psat of 1 W. It is designed to accept an input power of up to 8 dBm and provides a minimum small signal gain of 26 dB. The gain flatness is typically ±8 dB, with a 15 dB gain adjustment. The input VSWR is a maximum of 2:1, and the output VSWR under Psat is 3:1. It features a spur at Psat of -65 dBc and is unconditionally stable. The device is classified under ECCN 3A001. Mechanically, it has an enclosure type B, weighs 18 lbs, and uses 1.85mm Female connectors for RF input/output. Environmentally, it operates between 0ºC to 50ºC and can be stored from -25ºC to 65ºC.
he device is designed for a 50-67 GHz frequency range with a typical and minimum Psat of 5 W. It can handle an input power of up to 0 dBm and ensures a minimum small signal gain of 33 dB. The gain flatness is typically ±5 dB, with a 15 dB gain adjustment. The input VSWR is a maximum of 2:1, and the output VSWR under Psat is 3:1. It features a spur at Psat of -65 dBc and is unconditionally stable. The device is classified under ECCN 3A001. Mechanically, it has an enclosure type A, weighs 32 lbs, and uses 1.85mm Female for RF input and WR15 flange for RF output. Environmentally, it operates between 0ºC to 50ºC and can be stored from -25ºC to 65ºC.
