Products tagged with 'solid state microwave power amplifier'

The device is designed for a frequency range of 18-40 GHz and has a minimum Psat of 10 W. It supports an input power of up to 2 dBm and guarantees a minimum small signal gain of 40 dB. The gain flatness is typically ±5 dB, with a 15 dB gain adjustment. The input VSWR is a maximum of 2:1, and the output VSWR under Psat is 3:1. It features a spur at Psat of -65 dBc and is unconditionally stable. The device falls under ECCN 3A001.b4. Mechanically, it has an enclosure type A, weighs 40 lbs, and uses 2.92mm Female connectors for RF input/output. Environmentally, it operates between 0ºC to 50ºC and can be stored from -25ºC to 65ºC.

The device is designed for a frequency range of 18-40 GHz and has a minimum Psat of 20 W. It can handle an input power of up to 0 dBm and provides a minimum small signal gain of 43 dB. The gain flatness is typically ±5 dB, with a 15 dB gain adjustment. The input VSWR is a maximum of 2:1, and the output VSWR under Psat is 3:1, with infinite protection available with Option MPA-COUP. It features a spur at Psat of -65 dBc and is unconditionally stable. The device falls under ECCN 3A001.b4. Mechanically, it has an enclosure type A, weighs 44 lbs, and uses 2.92mm Female/WRD180C24 connectors for RF input/output. Environmentally, it operates between 0ºC to 50ºC and can be stored from -25ºC to 65ºC.

This device operates across a 2-18 GHz frequency range with a 20 W Psat, both typical and minimum. It can accommodate an input power of up to 5 dBm and delivers a minimum small signal gain of 41 dB. The gain flatness is typically ±4 dB, and it includes a 20 dB gain adjustment. The input VSWR is a maximum of 2:1, and the output VSWR under Psat is 3:1. Harmonic and spurious outputs are well-managed, with a 2nd harmonic power at Psat of -15 dBc and a spur at Psat of -65 dBc. Intermodulation distortion is minimized, with IM3 values of -38 dBc at a 13 dB back off and -20 dBc at a 3 dB back off, with a 10 MHz tone spacing. The device is unconditionally stable and is classified under EAR99. For mechanical specifications, it has an enclosure type B and weighs 17.6 lbs, with SMA Female connectors for RF input and output. Environmentally, it is designed to operate in temperatures ranging from 0ºC to 50ºC and can be stored from -25ºC to 65ºC, ensuring reliable performance in various environmental conditions.

This device is designed for a 2-18 GHz frequency range with a 50 W Psat, both typical and minimum. It supports an input power up to 0 dBm and ensures a minimum small signal gain of 49 dB. The gain flatness is typically ±4 dB, with a 20 dB gain adjustment. The input VSWR is a maximum of 2.1:1, and the output VSWR under Psat is 3:1. Harmonic and spurious emissions are controlled, with a second harmonic at Psat of -15 dBc and spurious at Psat of -65 dBc. Intermodulation distortion is minimized, with IM3 values of -38 dBc at a 13 dB back off and -20 dBc at a 3 dB back off, with a 10 MHz tone spacing. The device is unconditionally stable and is classified under ECCN 3A001.b4. Mechanically, it features an enclosure type A and weighs 48 lbs, with Type N Female connectors for RF input and output. It operates within a temperature range of 0ºC to 50ºC and can be stored from -25ºC to 65ºC, ensuring reliable performance in various environmental conditions. It also offers infinite protection with the optional MPA-COUP feature.

This device is tailored for a 2-6 GHz frequency range, with a 100 W Psat that’s both typical and minimum. It accepts an input power up to 0 dBm and ensures a small signal gain of at least 50 dB. The gain flatness is typically ±2.5 dB, and it offers a 20 dB gain adjustment. The input VSWR is capped at 2:1, and the output VSWR under Psat is 3:1. Harmonic and spurious emissions are controlled, with a second harmonic at Psat of -15 dBc and spurious at Psat of -65 dBc. Intermodulation distortion is minimized, with IM3 levels of -44 dBc at a 13 dB back off and -29 dBc at a 3 dB back off, with a 10 MHz tone spacing. The device is unconditionally stable and classified under ECCN 3A001.b4.a4. In terms of mechanical design, it features an enclosure type A and weighs 48 lbs, with Type N Female connectors for RF input and output. It operates within a temperature range of 0ºC to 50ºC and can be stored from -25ºC to 65ºC, ensuring reliable performance across various environmental conditions.

This device operates within a 2-6 GHz frequency range and provides a 200 W Psat, both typical and minimum. It can handle an input power of up to 0 dBm and offers a small signal gain of at least 50 dB. The gain flatness is typically ±2.5 dB, with a 20 dB gain adjustment capability. The input VSWR is a maximum of 2:1, and the output VSWR under Psat is 3:1. Harmonic and spurious outputs are well-controlled, with a 2nd harmonic power at Psat of -15 dBc and a spur at Psat of -65 dBc. The device is unconditionally stable and falls under ECCN 3A001.b4.a4. For mechanical specifications, it features an enclosure type C and weighs 64 lbs, with Type N Female connectors for RF input and output. The operating temperature range is 0ºC to 50ºC, and it can be stored between -25ºC to 65ºC, ensuring durability across various environments.